An extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)
نویسندگان
چکیده
منابع مشابه
An extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)
In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...
متن کاملComparison of the Proposed Device with Conventional Gate All around Tunnel Field Effect Transistor Gaa-tfet
In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...
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In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...
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In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
متن کاملRepresentation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
In this paper, the temperature dependence of some characteristics of cylindrical gate-all-around Si nanowire field effect transistor (GAA-Si-NWFET) is investigated to representing the temperature nano-sensor structures and improving their performance. Firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of GAA-Si-NWFET to propose the temperatu...
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ژورنال
عنوان ژورنال: Advances in Natural Sciences: Nanoscience and Nanotechnology
سال: 2016
ISSN: 2043-6262
DOI: 10.1088/2043-6262/7/2/025012